Precursors Deposit Films With High Dielectric Constant and Low Electrical Leakage
June 22, 2010 Lehigh Valley, Pa.
The rapid evolution from cell phones to smart phones and mobile computing, use of netbooks, and more powerful personal computers is continuing to drive demand for Dynamic Random Access Memory (DRAM). As DRAM performance can no longer be advanced solely by reducing feature size, integrated circuit manufacturers are now faced with the challenge of integrating materials with extremely high dielectric constants such as Strontium Titanium Oxide (STO). This allows the memory element to be shrunk and enables increasing amounts of data to be stored on each chip.
Earlier today, at the AVS 10th International Conference on Atomic Layer Deposition in Seoul, South Korea, Air Products (NYSE:APD) presented a paper entitled: Control of Strontium Titanate Films for Next Generation DRAM. The presentation was delivered by Dr. Laura Matz, technical manager for Advanced Memory Materials at Air Products. During the conference, Air Products also presented contributions describing the design of new Strontium and Titanium precursors, and the development of manufacturable delivery methods.
Air Products’ EXTREMA® STO Precursors have been evaluated within integrated capacitor structures and are able to achieve the target dielectric constants needed for 2x nm and further technology nodes. “By electrically testing the films deposited from Air Products Sr and Ti precursors, we were able to prove that our precursors are viable for the next generation of DRAM based on key electrical metrics,” said Dr. Matz. “When designing new precursors, it is important to understand the interplay between the structure of a precursor and its performance in depositing an acceptable thin film. Our strong synthetic team is constantly working to optimize precursor chemical structures to assure acceptable volatility and deposition performance within the process reactor.”
As part of the deposition process, Sr and Ti precursors are evaporated from either the solid or liquid phase and delivered in the gas phase to the deposition chamber. “Typically metalorganic precursors can be very challenging to deliver reliably. As part of our high-k precursor development program, we have established a test platform that enables us to study all aspects of chemical delivery in detail,” said Matz. “We are committed to providing products that address the challenges our customers face in developing this next generation of DRAM capacitors.”
To hear Dr. Matz’s presentation, please go to www.airproducts.com/markets/Electronics/elearning_center/videos/100618_EXTREMA/msm.htm.
For more information on the EXTREMA® STO and GST precursors, please visit www.airproducts.com/Electronics/Technologies/High-K.htm.
Air Products (NYSE:APD) serves customers in industrial, energy, technology and healthcare markets worldwide with a unique portfolio of atmospheric gases, process and specialty gases, performance materials, and equipment and services. Founded in 1940, Air Products has built leading positions in key growth markets such as semiconductor materials, refinery hydrogen, home healthcare services, natural gas liquefaction, and advanced coatings and adhesives. The company is recognized for its innovative culture, operational excellence and commitment to safety and the environment. In fiscal 2009, Air Products had revenues of $8.3 billion, operations in over 40 countries, and 18,900 employees around the globe. For more information, visit www.airproducts.com.
NOTE: This release may contain forward-looking statements. Actual results could vary materially, due to changes in current expectations.