Maintaining film performance and quality while managing a thermal budget is a challenge faced by many LPCVD processors. To meet this need, Schumacher has developed bis(tert-butylamino)silane (BTBAS) as a silicon nitride source, replacing silane and dichlorosilane, for the chemical vapor deposition of dense silicon nitride films at 550ºC–600ºC. While the required process temperature is significantly lower, BTBAS nitrides provide etch rates and electrical properties similar to dichlorosilane-based films. In addition, because BTBAS is chlorine-free, the potential production of the by-product ammonium chloride is eliminated, reducing the possibility of clogged abatement lines. BTBAS can also be used to deposit silicon oxide under the same conditions by simply changing the reactant gas. This flexibility makes BTBAS a leading solution for sidewall spacer applications. With its combination of lower deposition temperature and unyielding film quality, BTBAS has enabled the industry to continue utilizing LPCVD processes for current and future devices.

And when your thermal budget hits the 550ºC BTBAS limit? Just ask—I'll tell you more.