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Air Products and Chemicals, Inc. -- Electronics -- Ask the Experts
     
 

Pearlstein

Ron Pearlstein
Electronics Technology - Research Associate
     
  Question
I'm experiencing oxygen-related defects in my low-temperature SiGe and silicon growth processes. What could be causing this?
 
 

Answer

 

 

 

 

 

 

 

 

 

 

 

 

 

Air Products has conducted extensive research and determined that HCl, even when used only for chamber cleaning, may be a source of moisture (H2O) that can contaminate the reactor and lead to oxygen atom-related defects.

HCl used in the epitaxial process can  generate dislocations and other defects. Air Products has therefore introduced MegaBIP® HCl with purity levels of 99.9995%, provided in a unique cylinder with a proprietary internal purifier that reduces moisture levels to less than 0.20 ppm.

As shown in the graph below, extensive testing has shown that MegaBIP HCl can significantly reduce moisture-level defects in the SiGe growth process. Additionally, MegaBIP HCl's unique cylinder allows the high purity level to remain the same from the beginning until it is run essentially liquid-empty, enabling the user to experience higher delivered capacity. This contrasts with conventional cylinders where purity levels can fluctuate widely.

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