21st April 2004 – Air Products announced today at Semicon Europa, Munich, Germany, that it is introducing Megabit III™ Arsine to the European market.
The introduction of Megabit III™ Arsine, the highest grade of arsine on the market, demonstrates a continued effort to provide solutions that meet the changing demands of the compound semiconductor market. High purity arsine is essential to grow epitaxial films with low background doping concentration via the MOCVD process.
Typical customer requirements are dopant concentrations of 5x1014 /cm³. Air Products' Electronics team has developed Megabit III, with background doping concentration in GaAs of <1014 /cm³.
"Until recently, background doping levels of 1015/cm³ were considered acceptable in most applications. Most currently available high-purity grades of arsine can satisfy this requirement. However, process changes and demand for more sophisticated devices have resulted in the need to lower background doping levels," explains Dr Rajiv Agarwal, lead research engineer, Air Products.
Results for Megabit III grade arsine for Epitaxial GaAs from MOCVD Process
Process Conditions:
| Film thickness: |
10µ |
| Growth Temperature: |
650 °C |
| V/III: |
150 |
| Cylinder number |
Hall Mobility(cm²/V.s) |
Dopant Concentration(/cm³) |
| SD010760 |
187,000 |
2.0x1013 |
| SD0012546 |
197,000 |
1.8x1013 |
| SD011382 |
186,000 |
7.0x1013 |
| SG9927720B |
181,000 |
5.4x1013 |
| SD0012381 |
167,000 |
3.5x1013 | |
|
