CONTACT
INFORMATION
Tracey Lawson
760-929-6228
or your local sales representative today to learn more about this exciting new product.
LINKS
Listen to these Podcasts:
Low-K Overview
Tracey Lawson and Mark O'Neill discuss Air Products'
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PDEMS
Mary Haas discusses the Low-k product line
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PDEMS™ ILD Precursor
A Quicker Ride to the Next Node
Air Products – the leading worldwide supplier of low-k dielectric materials, has again strengthened its product portfolio with the addition of PDEMS™ interlayer dielectric (ILD) precursor. PDEMS ILD, an organosilicate glass for ultra-low dielectric constant films for intermetal dielectric applications, is the newest innovation to the industry-leading Air Products portfolio of low-k dielectric materials including 3MS, DMDMOS, OMCTS, ZTOMCATS™ and Z4MS™ precursors.
The PDEMS™ ILD precursor, developed by Air Products, is a breakthrough product for making a porous low-k dielectric material by PECVD, and is the leading candidate currently being evaluated as a 45nm solution both by device and major PECVD equipment manufacturers. The organosilicate structure of the film is created using our patented DEMS™ ILD precursor, referred to as a “structure former”. Pores are imparted to the film by employing a hydrocarbon-based precursor as a “porogen” that co-deposits during the growth of the film. Pores are created by removing the porogen using various post-treatment processes. In addition, Air Products has developed a UV-based post-treatment process that dramatically improves the final mechanical properties of the film. A unique feature of the PDEMS ILD process is the tunability of the dielectric constant (k) from 2.7 to below 2.0 by optimizing the chemical formulation and process conditions. This attribute eliminates the need for making process chemistry changes at each technology node. PDEMS meets material property requirements for successful integration at 45 nm geometries and beyond.
As chipmakers implement low-k, it is apparent that integration schemes are becoming more end-user specific. Adoption of porous low-k materials enables the co-introduction of various integration support products. Through our ACT® product line, we have developed compatible strippers and wet clean solutions for successful integration of PDEMS ILD.
Porous OSG Films by PECVD
(PDEMS™ ILD Process1)
1US Patents : 6,583,048; 6,846,515