ACT® 114 | ACT® 114 is a semi-aqueous, low-hydroxylamine content formulation designed for etch residue removal and positive resist stripping. ACT 114 provides a lower cost of ownership and superior EH&S profile compared to traditional hydroxylamine-based strippers and has the advantage of zero etch of silicon. | |
ACT® 273 |
ACT 273 is a semi-aqueous formulated product designed for effective removal of etch residues from CoWP/Cu and porous low-k technologies.
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ACT® 410 | ACT 410 is a specially formulated product for stripping hard to remove positive photoresist, including UV-cured resist and organic etch residue
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ACT® 412 | ACT 412 is a specially formulated product for stripping hard to remove positive photoresist, including UV-cured resist and organic etch residue.
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ACT® 690SX |
ACT 690SX is an organic solvent-based blend that is very effective in removing severely processed photoresist films and etch residue over corrosive sensitive metals and alloys.
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ACT® 915A |
ACT 915A is a highly effective hydroxylamine-containing etch residue remover formulated to remove etching residues after via, poly, and aluminum metal etch process.
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ACT® 927C |
ACT 927C is a highly effective HA-containing etch residue remover and positive photoresist stripper. It is extremely successful in removing refractory etch residue while protecting exposed aluminum, titanium, and tungsten.
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ACT® 930 | ACT® 930 is a member of the reduced-Hydroxylamine family of stripper products. It is extremely effective in removing refractory etch residue and positive photoresist while protecting exposed aluminum, titanium, and tungsten. | |
ACT® 935 UP | ACT® 935 UP is a highly effective Hydroxylamine-containing etch residue and positive resist stripper. This product has gained acceptance in a wide range of applications throughout the semiconductor industry. | |
ACT® 940 | ACT 940 is a highly effective HA-containing etch residue remover and positive photoresist stripper.
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ACT® 970 | ACT 970, a member of the ACT family of stripper products, is extremely effective in removing refractory etch residue while protecting exposed copper.
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ACT® AS-65 | ACT AS-65 is a highly effective non-HA amine-based stripper with cleaning performance rivaling that of hydroxylamine(HA)-containing products.
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ACT® CMIK-S | ACT<sup>®</sup> CMIK-S is a proprietary formulation specifically designed for the effective removal of positive photoresists from highly corrosion-sensitive metals and metal alloy substrates.
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ACT® CMI-S | ACT CMI-S is a corrosion inhibited water-soluble solution which effectively removes hard-processed positive resist and organic etch residue from corrosion-sensitive metal alloy substrates.
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ACT® EZSTRIP® 528H |
ACT EZSTRIP 528H is a fluoride-containing chemistry specially formulated for effective removal of post-etch and ash residue. Designed to be an aggressive cleaners mild process conditions.
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ACT® EZSTRIP®20 | ACT© EZSTRIP©20 is a highly effective non-Hydroxylamine (HA) stripper with the cleaning performance of HA-containing products. In addition, ACT EZSTRIP 20 can be used in aluminum or copper applications.
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ACT® NE-111 | ACT® NE-111 is a buffered, pH stable fluoride-containing stripper specifically formulated for removal of highly oxidized etch residues while reducing surface metal contamination. | |
ACT® NE-14 | ACT NE-14 is a fluoride-containing chemistry specially formulated for removal of organic and highly oxidized etch residues and/or for controlled etching of contaminated oxide surfaces.
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ACT® NE-168 |
ACT NE-168 is a buffered fluoride-containing stripper product engineered to meet the challenging requirements of semiconductor surface preparation technology. The formulation removes ash and etch residue and is compatible with copper and low-k materials.
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ACT® NE-89 | ACT NE-89 is a fluoride-containing chemistry specifically formulated for use in etch residue removal and/or controlled etching of contaminated oxide surfaces.
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ACT® NE-200 |
ACT® NE-200 is a fluoride-containing product especially formulated for removal of inorganic and highly oxidized etch residues and/or for controlled etching of contaminated oxide surfaces.
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